IRF7104PBF

Description：MOSFET 2P-CH 20V 2.3A 8SO
Series：HEXFET®

SKU:e32f73f90950 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7104PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7104PBF

Description：MOSFET 2P-CH 20V 2.3A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：290pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7104PBF

IRF7104PBF

FET, MOSFET Arrays Overview

The IRF7104PBF is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source breakdown voltage (Vds) of -20 V and a continuous drain current (Id) of -2.3 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 250 mΩ at a gate-source voltage (Vgs) of -10 V. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 2 W in the SO-8 package.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration for efficient switching applications
Low on-resistance optimized for power efficiency
Robust thermal performance with high junction temperature capability
Logic-level gate drive compatibility

FET, MOSFET Arrays Applications

Power management circuits
DC-DC converter topologies
Motor control systems
Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for lead-free packaging specifications. Ensure the ordering suffix matches the required tape and reel or cut tape format. Validate datasheet revisions against the specific production batch to guarantee parameter consistency.

FET, MOSFET Arrays Selection Notes

Evaluate thermal resistance characteristics relative to the intended PCB layout and cooling strategy. Assess gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds. Verify that the operating voltage and current limits remain within the specified absolute maximum ratings under all expected load conditions.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is housed in an SO-8 surface-mount package. The device is designed for general-purpose power switching tasks requiring reliable performance in consumer and industrial electronics.