IRF7105TRPBF

FET, MOSFET Arrays Overview

The IRF7105TRPBF is a dual N-channel and P-channel enhancement mode MOSFET from the HEXFET series, manufactured by Infineon Technologies. It integrates two independent transistors in a single SOIC-8 surface-mount package. The device features a drain-source voltage rating of 25 V, with continuous drain currents of 3.5 A for the N-channel and 2.3 A for the P-channel. Key electrical parameters include a maximum on-resistance of 100 mΩ for the N-channel and 250 mΩ for the P-channel at 10 V gate drive. The unit operates within a temperature range of -55 °C to +150 °C and supports a maximum power dissipation of 2 W.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel logic-level MOSFETs into a single compact component
• Utilizes advanced HEXFET processing technology to achieve low on-resistance per silicon area
• Designed for fast switching speeds and ruggedized device performance

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converters
• Low-side and high-side switching in bridge circuits
• Power management modules requiring compact dual-transistor solutions

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF confirms tape-and-reel packaging and lead-free compliance when ordering. Confirm that the SOIC-8 pinout matches the target PCB footprint design. Ensure the 25 V voltage rating aligns with the system's maximum operating conditions. Check for any RoHS or REACH regulatory requirements relevant to the final assembly location.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require combining both N-type and P-type switching functions in one package. It is suitable for applications where moderate current handling up to 3.5 A is sufficient. Consider the thermal resistance of the SOIC-8 package for heat dissipation needs. Verify that the logic-level gate threshold allows direct driving from standard control voltages.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs, known for optimized switching characteristics. The IRF7105 variant specifically targets cost-effective dual-channel solutions. It represents a transition from discrete components to integrated pairs, simplifying layout and reducing board space in power electronics designs.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the dual N/P configuration and SOIC-8 package. Verify equivalent voltage ratings of at least 25 V and comparable on-resistance values. Cross-reference with other manufacturers offering similar dual MOSFET arrays if supply availability is a concern.