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IRF7106 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 3A/2.5A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7106
- Description：MOSFET N/P-CH 20V 3A/2.5A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A, 2.5A
- Rds On (Max) @ Id, Vgs：125mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：300pF @ 15V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7106
FET, MOSFET Arrays Overview
The IRF7106 is a high-voltage, high-speed power MOSFET manufactured by Infineon Technologies. It features an N-channel configuration with a maximum drain-source voltage of 600V and a continuous drain current rating of 3A at 25°C. The device utilizes advanced trench technology to achieve low on-resistance, ensuring efficient power switching. Packaged in a compact SO-8 format, it supports junction temperatures up to 150°C and includes built-in protection against electrostatic discharge.
FET, MOSFET Arrays Feature Summary
- High-voltage capability suitable for demanding power applications
- Low on-resistance for improved energy efficiency
- Robust thermal performance under high load conditions
- Integrated ESD protection mechanisms
FET, MOSFET Arrays Applications
- Motor control systems
- Power supply circuits
- Industrial automation equipment
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix codes on the component marking to ensure compatibility with your design requirements. Confirm that the package type matches your PCB footprint specifications. Check for any RoHS compliance documentation if required by your manufacturing standards. Ensure the supplier provides genuine Infineon products to avoid counterfeit risks.
FET, MOSFET Arrays Selection Notes
Consider the thermal management requirements when selecting this component for high-current applications. Evaluate the gate charge characteristics to optimize switching speed and minimize losses. Ensure the operating voltage remains within the specified limits to maintain reliability. Review the datasheet for detailed electrical characteristics and absolute maximum ratings before integration.
FET, MOSFET Arrays Part Context
This component belongs to Infineon's portfolio of power MOSFETs designed for general-purpose switching applications. It complements other high-voltage devices in the lineup, offering a balance between performance and cost-effectiveness. The SO-8 package allows for easy integration into various circuit designs.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference guides for compatible alternatives. Verify pinout compatibility and electrical parameters before substitution. Ensure the replacement meets all safety and performance standards required by your application.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
