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IRF7204TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 5.3A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF7204TRPBF
- Description：MOSFET P-CH 20V 5.3A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for IRF7204TRPBF
Single FETs, MOSFETs Overview
The IRF7204TRPBF is a single P-channel enhancement mode MOSFET from the Infineon HEXFET series. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5.3 A at 25°C. The device exhibits a typical on-resistance of 60 mΩ at a gate-source voltage of 10 V. Key electrical parameters include a gate charge of 25 nC, a power dissipation rating of 2.5 W, and an operating temperature range spanning from -55°C to +150°C. It utilizes SOIC-8 surface-mount packaging.
Single FETs, MOSFETs Feature Summary
- Logic level compatible for direct drive from standard logic interfaces
- Advanced process technology designed for low on-resistance performance
- Single channel configuration with integrated body diode
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation. Ensure the component matches the required voltage and current ratings for the target circuit design before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a single P-channel switch with 20 V capability is required. The 60 mΩ on-resistance supports efficient power handling in low-voltage applications. Verify that the SOIC-8 footprint aligns with the PCB layout constraints and thermal requirements of the system.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon HEXFET family of power MOSFETs. It is manufactured using silicon technology and is designed for general-purpose switching applications. The device is distinct from dual-channel variants within the same series, offering a single independent channel for simplified circuit integration.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitutes. Cross-reference pinouts and electrical characteristics carefully when considering alternative manufacturers or packages.
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