IRF7301TR

$0.69

Description：MOSFET 2N-CH 20V 5.2A 8SOP
Series：-

SKU:a2d037c875c1 Category: FET, MOSFET Arrays Brand: UMW

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF7301TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET 2N-CH 20V 5.2A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7301TR

Description：MOSFET 2N-CH 20V 5.2A 8SOP
Series：-
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
Rds On (Max) @ Id, Vgs：40mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：660pF @ 15V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7301TR

IRF7301TR

FET, MOSFET Arrays Overview

The IRF7301TR is a dual N-channel HEXFET power MOSFET manufactured by UMW in an SOP-8 package. It features Generation V technology with a drain-source voltage (VDS) of 20V and a maximum continuous drain current (ID) of 5.7A at 25°C. The device offers ultra-low on-resistance, specified as 40mΩ at VGS=4.5V and 50mΩ at VGS=2.7V. Key electrical parameters include a gate charge (Qg) of 13.3nC at 4.5V, total gate charge (Qgd) of 5.3nC, and a maximum junction-to-ambient thermal resistance (RθJA) of 62.5 K/W. The component supports a maximum junction temperature of 150°C and is available in tape and reel packaging.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration for space-efficient circuit design
Ultra-low on-resistance optimized for high efficiency
Fast switching capabilities with dynamic dv/dt rating
Surface mount SOP-8 package with enhanced thermal characteristics

FET, MOSFET Arrays Applications

Power management circuits
Motor control applications
Switching regulators

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking matches UTM Semiconductor Co., Limited specifications. Confirm the ordering code corresponds to the IRF7301TR variant with a base quantity of 3000 units in tape and reel delivery mode. Ensure the SOP-8 package dimensions align with standard surface mount requirements.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring dual channel integration within a compact footprint. Consider the 20V VDS rating and 5.7A current capability against load requirements. Evaluate the thermal performance based on the 62.5 K/W junction-to-ambient resistance and expected ambient temperatures.

FET, MOSFET Arrays Part Context

This part belongs to the UMW power MOSFET portfolio utilizing Generation V technology. It serves as a surface-mount alternative to through-hole packages, enabling reduced board space usage. The dual die structure allows multiple devices to be utilized in a single application with improved thermal handling compared to single-channel equivalents.