ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF7303PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 4.9A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7303PBF
- Description：MOSFET 2N-CH 30V 4.9A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7303PBF
FET, MOSFET Arrays Overview
The IRF7303PBF is a dual N-channel power MOSFET manufactured by Infineon Technologies. It utilizes planar HEXFET technology and is housed in an SO-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current of 5.3 A at 25°C. Key electrical parameters include a maximum on-resistance of 50 mΩ at 10 V gate drive, a gate charge of 25 nC, and a power dissipation rating of 2 W. It operates within a temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for efficient circuit design
- Planar HEXFET technology for robust performance
- Logic-level gate threshold for direct drive compatibility
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the ordering part number matches the required packaging format for automated assembly processes.
FET, MOSFET Arrays Selection Notes
Select this component for low-voltage applications requiring dual N-channel isolation in a compact footprint. Evaluate thermal resistance and on-resistance requirements against the 50 mΩ specification. Consider the 30 V breakdown limit when designing for higher voltage environments.
FET, MOSFET Arrays Part Context
This component belongs to the IRF73xx series of dual MOSFETs from Infineon. These devices are designed for general-purpose switching applications where space efficiency and dual-channel functionality are prioritized. The series offers a balance of current handling and low on-resistance in standard surface-mount packages.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other Infineon dual N-channel MOSFETs in the SO-8 package. Verify pinout compatibility and electrical parameter equivalence before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
