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IRF7303QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 4.9A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7303QTRPBF is a dual N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon planar technology and is housed in an 8-SOIC surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports continuous drain currents up to 4.9 A. Key electrical characteristics include a maximum on-resistance of 50 mOhms, a gate-source voltage rating of 20 V, and a threshold voltage of 1 V. The component has a power dissipation capacity of 2 W and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'Q' against official Infineon documentation to confirm automotive or qualified status requirements. Ensure the ordering part number matches the exact datasheet revision. Confirm RoHS compliance details directly from the manufacturer's current product specification sheet before finalizing procurement orders.
Select this component when a dual N-channel solution is required within a 30 V system. Consider the 50 mOhm on-resistance for efficiency needs and the 8-SOIC package for space-constrained surface mount designs. Evaluate the 4.9 A current rating against peak load requirements to ensure adequate margin.
This part belongs to the IRF7303 series of dual MOSFETs from Infineon Technologies. It shares the core electrical specifications with the standard IRF7303TRPBF variant but may differ in qualification standards or manufacturing lot tracking associated with the 'Q' suffix designation within the company's discrete semiconductor portfolio.
The IRF7303TRPBF serves as a direct functional substitute with identical electrical parameters. Verify that any replacement meets the same package dimensions and pinout configuration to ensure board compatibility without redesign.
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