IRF7303TR

$0.69

Description：MOSFET 2N-CH 30V 4.9A 8SOP
Series：-

SKU:8da647c906cd Category: FET, MOSFET Arrays Brand: UMW

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Product introduction

IRF7303TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET 2N-CH 30V 4.9A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7303TR

Description：MOSFET 2N-CH 30V 4.9A 8SOP
Series：-
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
Rds On (Max) @ Id, Vgs：50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：520pF @ 25V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7303TR

IRF7303TR

FET, MOSFET Arrays Overview

The UMW IRF7303TR is a dual N-channel MOSFET array in an SOP-8 package. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.9A at 25°C, with a maximum power dissipation of 2W. The on-resistance (Rds(on)) is 50mΩ at Vgs=10V and 80mΩ at Vgs=4.5V. Gate threshold voltage (Vgs(th)) is 1V at Id=250µA. Total gate charge (Qg) is 25nC at Vgs=10V, and input capacitance (Ciss) is 520pF at Vds=25V. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration for space-efficient circuit design
Ultra-low on-resistance for improved efficiency
Fast switching characteristics with dynamic dv/dt rating
Surface mount SOP-8 package optimized for thermal performance

FET, MOSFET Arrays Applications

Power management circuits
DC-DC converter modules
Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking and part number against official datasheets upon receipt. Confirm RoHS compliance status and check for physical damage to the SOP-8 leads before soldering. Ensure storage conditions meet moisture sensitivity level requirements to prevent package degradation during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage, high-current switching applications requiring dual channels. Verify that the required Rds(on) meets system losses at the specific gate drive voltage. Ensure the PCB layout supports the thermal dissipation capabilities of the SOP-8 package within the specified ambient temperature range.

FET, MOSFET Arrays Part Context

This device belongs to the IRF7303 series of dual N-channel MOSFETs. It utilizes Generation V technology to achieve low on-resistance and fast switching speeds. The SOP-8 package is designed for vapor phase, infrared, or wave soldering techniques, offering enhanced thermal characteristics through a customized leadframe.