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IRF7304 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 4.3A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7304 is a dual P-channel HEXFET power MOSFET utilizing Generation V technology. It features an SO-8 surface-mount package with a customized leadframe for enhanced thermal performance. Key electrical parameters include a drain-to-source breakdown voltage of -20 V, a continuous drain current of -4.3 A at 25°C, and a maximum static drain-to-source on-resistance of 0.140 Ω at VGS = -2.7 V. The device supports a gate-to-source voltage of ±12 V and operates within a junction temperature range of -55 to +150 °C.
Verify the manufacturer origin, as the component was originally produced by International Rectifier before its acquisition by Infineon Technologies. Confirm that the specific ordering suffix matches the required packaging format, such as tape and reel availability, to ensure compatibility with automated assembly processes.
Select this component for applications requiring compact dual P-channel solutions. Evaluate the thermal resistance and derating curves to ensure adequate heat dissipation within the SO-8 package constraints. Verify that the logic level drive requirements align with the specified gate threshold voltage for reliable switching performance.
This part belongs to the HEXFET family of power MOSFETs, known for high efficiency and fast switching capabilities. The IRF7304 specifically addresses the need for space-saving dual configurations in power electronics, leveraging advanced silicon processing to minimize conduction losses while maintaining robust operational reliability.
Consult official cross-reference documentation for verified substitute part numbers from the same manufacturer or compatible equivalents.
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