FET, MOSFET Arrays IRF7304 product image

IRF7304

$0.65
  • Description:MOSFET 2P-CH 20V 4.3A 8SO
  • Series:HEXFET®

SKU:6dacc40b06a3 Category: Brand:

  
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IRF7304 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 4.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7304

  • Description:MOSFET 2P-CH 20V 4.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.3A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:610pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7304

IRF7304

FET, MOSFET Arrays Overview

The IRF7304 is a dual P-channel HEXFET power MOSFET utilizing Generation V technology. It features an SO-8 surface-mount package with a customized leadframe for enhanced thermal performance. Key electrical parameters include a drain-to-source breakdown voltage of -20 V, a continuous drain current of -4.3 A at 25°C, and a maximum static drain-to-source on-resistance of 0.140 Ω at VGS = -2.7 V. The device supports a gate-to-source voltage of ±12 V and operates within a junction temperature range of -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration in a single SO-8 package
  • Generation V HEXFET technology for low on-resistance
  • Fast switching speed and ruggedized design
  • Customized leadframe for improved thermal characteristics

FET, MOSFET Arrays Applications

  • Power management circuits
  • Load switch applications
  • DC-DC converter designs

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as the component was originally produced by International Rectifier before its acquisition by Infineon Technologies. Confirm that the specific ordering suffix matches the required packaging format, such as tape and reel availability, to ensure compatibility with automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual P-channel solutions. Evaluate the thermal resistance and derating curves to ensure adequate heat dissipation within the SO-8 package constraints. Verify that the logic level drive requirements align with the specified gate threshold voltage for reliable switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs, known for high efficiency and fast switching capabilities. The IRF7304 specifically addresses the need for space-saving dual configurations in power electronics, leveraging advanced silicon processing to minimize conduction losses while maintaining robust operational reliability.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference documentation for verified substitute part numbers from the same manufacturer or compatible equivalents.

IRF7304IRF7304
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