ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF7306TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 3.6A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7306TRPBF
- Description：MOSFET 2P-CH 30V 3.6A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：440pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7306TRPBF
FET, MOSFET Arrays Overview
The IRF7306TRPBF is a dual P-Channel enhancement mode MOSFET from the Infineon HEXFET series, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 3.6 A. The device exhibits a maximum on-resistance of 100 mOhms and a gate charge of 16.7 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 2 W of power with rise and fall times of 17 ns and 18 ns respectively.
FET, MOSFET Arrays Feature Summary
- Dual P-Channel configuration for efficient half-bridge or synchronous rectification applications
- Low on-resistance minimizes conduction losses in power switching circuits
- Fast switching characteristics support high-frequency operation
- Robust thermal performance suitable for demanding industrial environments
FET, MOSFET Arrays Applications
- DC-DC converter output stages
- Motor driver low-side switches
- Power management integrated circuits
- Synchronous rectification in point-of-load modules
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors as counterfeits exist. Confirm RoHS compliance status via official datasheets. Check lifecycle status as obsolescence may affect long-term supply. Ensure storage conditions prevent moisture damage prior to reflow soldering. Validate pinout alignment with PCB footprint specifications during integration.
FET, MOSFET Arrays Selection Notes
Compare on-resistance and gate charge against alternative dual P-channel MOSFETs for optimal efficiency. Evaluate thermal resistance values for heat dissipation requirements in enclosed designs. Consider voltage headroom relative to system rail stability. Assess package compatibility with existing assembly processes and automated placement equipment constraints.
FET, MOSFET Arrays Part Context
Part of the HEXFET family known for optimized silicon technology. Designed for general-purpose power switching where size and efficiency matter. Competes with similar dual MOSFET solutions from other semiconductor manufacturers offering comparable voltage ratings and current capabilities in standard surface-mount packages.
FET, MOSFET Arrays Replacement Considerations
IRF7309TRPBF offers mixed N/P channel configuration with slightly different current ratings. IRF7303TRPBF provides dual N-channel option with lower on-resistance. Verify pin compatibility and electrical parameters before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
