IRF7309PBF

FET, MOSFET Arrays Overview

The IRF7309PBF is a dual MOSFET from Infineon Technologies, integrating one N-channel and one P-channel enhancement-mode field-effect transistor within a single SOIC-8 surface-mount package. Designed for low-voltage applications, it features a drain-source breakdown voltage of 30 V. The device supports continuous drain currents of approximately 4 A for the N-channel and 3 A for the P-channel configurations. It exhibits a typical on-resistance of 50 mΩ at 10 V gate drive, enabling efficient power switching with minimal conduction losses in compact circuit designs.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a single compact package to reduce board space and simplify assembly.
• Features logic-level gate threshold characteristics suitable for direct interfacing with standard digital logic outputs.
• Provides robust thermal performance with a maximum junction temperature rating of 150 °C for reliable operation under varying conditions.

FET, MOSFET Arrays Applications

• Low-side and high-side switching circuits in battery-powered portable devices
• Load switching and power management modules in consumer electronics
• Motor control interfaces requiring complementary drive signals

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Ensure the selected variant matches the required package style and RoHS compliance status for your manufacturing process. Cross-reference the part number with current Infineon datasheets to validate availability and any recent design changes before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a design requires both N-type and P-type switching capabilities within a constrained footprint. Evaluate the 30 V voltage rating against the system's maximum operating voltage to ensure adequate headroom. Consider the 50 mΩ on-resistance for thermal management calculations, as lower resistance reduces heat generation during continuous conduction periods in power-sensitive applications.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's portfolio of discrete power semiconductors designed for general-purpose switching. It utilizes silicon technology optimized for cost-effective mass production while maintaining high reliability standards. The dual configuration allows designers to implement bridge drivers or level shifters without sourcing separate components, streamlining the bill of materials for low-power electronic systems.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any alternative maintains identical pin assignments and voltage ratings to prevent circuit damage during replacement.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage allowed for the IRF7309PBF?

The absolute maximum gate-source voltage rating is typically ±20 V. Exceeding this limit may damage the gate oxide layer.

Does the IRF7309PBF include internal body diodes?

Yes, both the N-channel and P-channel transistors contain intrinsic body diodes that conduct current when the device is reverse-biased.

How does the on-resistance vary with gate voltage?

The on-resistance decreases as the gate-source voltage increases. The specified value of 50 mΩ is measured at a gate drive of 10 V.