FET, MOSFET Arrays IRF7309QTRPBF product image

IRF7309QTRPBF

  • Description:MOSFET N/P-CH 30V 4A/3A 8SO
  • Series:-

SKU:46376ec5a0b1 Category: Brand:

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IRF7309QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 4A/3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7309QTRPBF

  • Description:MOSFET N/P-CH 30V 4A/3A 8SO
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:4A, 3A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:520pF @ 15V
  • Power - Max:1.4W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7309QTRPBF

IRF7309QTRPBF

FET, MOSFET Arrays Overview

The IRF7309QTRPBF is an automotive-grade, dual-channel MOSFET from Infineon's HEXFET series. It integrates one N-channel and one P-channel enhancement-mode transistor within a single SOIC-8 surface-mount package. The device supports a drain-source voltage of 30 V with continuous current ratings of 3.5 A for the N-channel and 4.7 A for the P-channel. Key electrical parameters include an on-resistance of 80 mΩ and a gate charge of 16.7 nC at 10 V. It operates reliably across a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Automotive qualification compliant with AEC-Q100 standards for enhanced reliability in vehicle environments.
  • Dual-channel configuration combining N-channel and P-channel transistors into a compact footprint.
  • Low on-resistance design facilitates efficient power switching with reduced conduction losses.
  • Enhanced thermal performance allows stable operation under high-temperature conditions.

FET, MOSFET Arrays Applications

  • Automotive low-side and high-side load switching applications
  • Power distribution units in vehicle electronics
  • Motor control circuits requiring complementary channel pairs

FET, MOSFET Arrays Procurement Notes

Verify that the specific part number suffix matches the required automotive grade and tape-and-reel packaging format. Confirm RoHS compliance status through official manufacturer documentation before integration. Ensure storage and handling procedures adhere to moisture sensitivity level requirements to maintain component integrity during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when an integrated solution for both sourcing and sinking currents is required in space-constrained automotive designs. The dual-channel architecture reduces board area compared to discrete alternatives. Evaluate the 80 mΩ on-resistance against system efficiency targets and ensure the SOIC-8 package aligns with available PCB footprints and thermal management strategies.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's HEXFET family, known for optimized power density and switching performance. The Q-series designation indicates automotive qualification, distinguishing it from standard industrial variants. It serves as a specialized building block for power management systems where reliability and compact form factors are critical constraints.

FET, MOSFET Arrays Replacement Considerations

IRF7309TRPBF: Standard industrial grade version without automotive certification; verify if AEC-Q100 compliance is mandatory for the application.

IRF7309QTRPBFIRF7309QTRPBF

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