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IRF7309TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N/P-CH 30V 4A 8SOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7309TR
- Description：MOSFET N/P-CH 30V 4A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT),-
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta), 3A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 15V, 440pF @ 15V
- Power - Max：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7309TR
FET, MOSFET Arrays Overview
The IRF7309TR is a dual N-channel and P-channel MOSFET manufactured by UMW in an industry-standard SO-8 package. It features a drain-source breakdown voltage of 30V for both channels. The N-channel exhibits a maximum on-resistance of 70mΩ at VGS=2.7V and 50mΩ at VGS=4.5V. The P-channel shows a maximum on-resistance of 140mΩ at VGS=2.7V and 100mΩ at VGS=4.5V. The component supports surface mount installation with a base quantity of 3000 units per tape and reel delivery mode.
FET, MOSFET Arrays Feature Summary
- Dual N + P Channel MOSFET configuration
- Industry-standard pinout SO-8 Package
- Compatible with existing surface mount techniques
FET, MOSFET Arrays Applications
- Low Voltage Power Switching
- Power Management ICs
- DC/DC Converters
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer designation as UMW (UTD Semiconductor Co.,Limited) rather than Infineon, despite the part number similarity to legacy designs. Confirm the specific ordering code IRF7309TR corresponds to the SOP-8 package with a base quantity of 3000 units in tape and reel format. Ensure datasheet alignment with current product specifications before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring a compact dual N/P channel solution in an SO-8 footprint. The low on-resistance values support efficient power switching in low voltage environments. Verify that the 30V breakdown voltage meets the circuit requirements and that the thermal characteristics are suitable for the intended operating conditions within the specified package constraints.
FET, MOSFET Arrays Part Context
This component belongs to the IRF7309 series of dual MOSFETs. It provides a combined N-channel and P-channel solution in a single package, facilitating space-saving designs in portable electronics and power management systems. The SO-8 package ensures compatibility with standard automated assembly processes used across the semiconductor industry.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other manufacturers offering dual N/P MOSFETs in SO-8 packages. Verify pinout compatibility and electrical parameter equivalence, specifically RDS(on) and VDS ratings, before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
