IRF7309TRPBF

FET, MOSFET Arrays Overview

The IRF7309TRPBF is a dual-channel enhancement-mode MOSFET from the Infineon HEXFET series, integrating one N-channel and one P-channel transistor in an SOIC-8 surface-mount package. It features a drain-source voltage rating of 30 V and continuous drain currents of 4 A for the N-channel and 3 A for the P-channel. The device exhibits a maximum on-resistance of 80 mΩ at 10 V gate drive, with a typical gate charge of 16.7 nC. Operating within a temperature range of -55°C to +150°C, it offers a power dissipation capacity of 1.4 W.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel transistors into a single compact component
• Provides electrical isolation between the two internal channels
• Utilizes planar HEXFET technology for enhanced switching performance

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converters
• Half-bridge and full-bridge motor driver circuits
• Low-side and high-side load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official datasheets to confirm packaging and tape-and-reel specifications. Ensure the procurement channel provides valid RoHS compliance documentation. Cross-reference the manufacturer part number directly with Infineon's current product status to avoid obsolete stock. Confirm that the delivered components match the exact pinout and marking requirements for the target PCB design.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require integrated complementary switching pairs. It is suitable for low-voltage applications requiring moderate current handling. Compare its on-resistance and gate charge against discrete alternatives to evaluate efficiency gains. Consider the thermal limitations inherent to the SOIC-8 package for high-duty-cycle operations.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon HEXFET family, known for optimized power loss characteristics. The dual configuration simplifies circuit layout by reducing component count compared to using separate N-channel and P-channel MOSFETs. It serves as a standard solution for general-purpose power management tasks where size and integration are prioritized over extreme power density.

FET, MOSFET Arrays Replacement Considerations

IRF7319TRPBF: Offers higher current ratings (6.5A) and lower on-resistance (46mΩ) in the same package.