FET, MOSFET Arrays IRF7311TR product image

IRF7311TR

$0.69
  • Description:MOSFET 2N-CH 30V 6.5A 8SOP
  • Series:-

SKU:91e4c427d3e2 Category: Brand:

  
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IRF7311TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET 2N-CH 30V 6.5A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7311TR

  • Description:MOSFET 2N-CH 30V 6.5A 8SOP
  • Series:-
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Ta), 9A (Tc)
  • Rds On (Max) @ Id, Vgs:13mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:580pF @ 15V
  • Power - Max:1W (Ta), 1.6W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7311TR

IRF7311TR

FET, MOSFET Arrays Overview

The IRF7311TR is a dual N-channel enhancement mode MOSFET from UMW, housed in an SOP-8 package. It features a 30V drain-source voltage rating and a continuous drain current of 9A at 25°C case temperature. The device achieves an on-resistance below 13mΩ at VGS=10V and 18mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 2.5V typ., total gate charge of 5.3nC, and a single pulse avalanche energy of 15mJ. Thermal resistance junction-to-ambient is 75°C/W, with an operating junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for compact power switching applications
  • Low on-resistance optimized for high efficiency
  • Ruggedized design supporting avalanche energy ratings

FET, MOSFET Arrays Applications

  • Battery protection circuits
  • Load switch implementations
  • Uninterruptible power supply systems

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer designation when sourcing, as the part number prefix may vary between original equipment manufacturers and secondary suppliers like UMT/UMW. Confirm that the SOP-8 tape and reel packaging matches the required delivery format for automated assembly lines. Ensure the component meets RoHS compliance standards if required by the final product specifications.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring a 30V breakdown capability. The dual channel architecture allows for space-constrained designs where two independent switches are needed within a single footprint. Evaluate the thermal performance against the 75°C/W junction-to-ambient resistance to ensure adequate heat dissipation without excessive heatsinking in the target enclosure.

FET, MOSFET Arrays Part Context

This component belongs to the family of trench technology power MOSFETs designed for small power switching. It serves as a functional equivalent to legacy parts such as the IRF7311, offering comparable electrical characteristics in a surface-mount package. The dual-channel layout provides designers with flexibility for bridge or half-bridge configurations.

FET, MOSFET Arrays Replacement Considerations

The datasheet references the IRF7311 as a similar specification part. Verify pinout compatibility and exact parameter tolerances before substituting components from different manufacturers to ensure circuit stability.

IRF7311TRIRF7311TR
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