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IRF7311TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 6.6A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7311TRPBF is a dual N-channel enhancement-mode MOSFET from Infineon's HEXFET series, housed in an SO-8 surface-mount package. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 6.6 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 29 mΩ at Vgs=4.5 V, with a typical gate charge (Qg) of 18 nC at 4.5 V. Power dissipation reaches 2 W, and the junction temperature range extends up to 150°C.
Verify the specific suffix TRPBF indicates tape-and-reel packaging when sourcing. Confirm the manufacturer is Infineon Technologies to ensure authenticity. Check RoHS compliance status via official datasheets. Validate the SO-8 package dimensions against your PCB footprint requirements before finalizing procurement decisions.
Select this component for low-voltage, high-current applications requiring dual N-channel isolation. The 20 V rating suits 3.3 V or 5 V systems. Compare Rds(on) and Qg values against alternatives for efficiency optimization. Ensure the SO-8 package fits the available board space and thermal constraints of the design.
This part belongs to Infineon's HEXFET family, known for planar trench technology. The IRF7311 variant specifically offers dual N-channel functionality in an 8-pin SOIC package. It complements other HEXFET devices like the IRF7309 and IRF7319, which offer similar configurations but with different voltage or current ratings.
The IRF7309TRPBF serves as a functional substitute, offering dual N/P-channel configuration with comparable 30 V ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Id before substitution.
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