FET, MOSFET Arrays IRF7311TRPBF product image

IRF7311TRPBF

$0.94
  • Description:MOSFET 2N-CH 20V 6.6A 8SO
  • Series:HEXFET®

SKU:666b625f0b43 Category: Brand:

  
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IRF7311TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 6.6A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7311TRPBF

  • Description:MOSFET 2N-CH 20V 6.6A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6.6A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7311TRPBF

IRF7311TRPBF

FET, MOSFET Arrays Overview

The IRF7311TRPBF is a dual N-channel enhancement-mode MOSFET from Infineon's HEXFET series, housed in an SO-8 surface-mount package. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 6.6 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 29 mΩ at Vgs=4.5 V, with a typical gate charge (Qg) of 18 nC at 4.5 V. Power dissipation reaches 2 W, and the junction temperature range extends up to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for compact circuit integration
  • Low on-resistance for efficient power switching
  • Fast switching characteristics with low gate charge
  • Robust thermal performance up to 150°C junction temperature

FET, MOSFET Arrays Applications

  • DC-DC converter output stages
  • Load switching applications
  • Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF indicates tape-and-reel packaging when sourcing. Confirm the manufacturer is Infineon Technologies to ensure authenticity. Check RoHS compliance status via official datasheets. Validate the SO-8 package dimensions against your PCB footprint requirements before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage, high-current applications requiring dual N-channel isolation. The 20 V rating suits 3.3 V or 5 V systems. Compare Rds(on) and Qg values against alternatives for efficiency optimization. Ensure the SO-8 package fits the available board space and thermal constraints of the design.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET family, known for planar trench technology. The IRF7311 variant specifically offers dual N-channel functionality in an 8-pin SOIC package. It complements other HEXFET devices like the IRF7309 and IRF7319, which offer similar configurations but with different voltage or current ratings.

FET, MOSFET Arrays Replacement Considerations

The IRF7309TRPBF serves as a functional substitute, offering dual N/P-channel configuration with comparable 30 V ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Id before substitution.

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