IRF7313QTRPBF

Description：MOSFET 2N-CH 30V 6.5A 8SO
Series：-

SKU:0e8795edd09e Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7313QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.5A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7313QTRPBF

Description：MOSFET 2N-CH 30V 6.5A 8SO
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.5A
Rds On (Max) @ Id, Vgs：29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
Power - Max：2W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7313QTRPBF

IRF7313QTRPBF

FET, MOSFET Arrays Overview

The IRF7313QTRPBF is a dual N-channel power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a SO-8 surface-mount package with two independent channels. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 6.5 A at 25°C. Key electrical parameters include a maximum on-resistance of 46 mΩ at 4.5 V gate drive and 29 mΩ at 10 V. Typical gate charge values are 6.4 nC for Qgd and 22 nC for Qg at 10 V. The component operates within a junction temperature range up to 150°C and has a thermal resistance (RthJA) of 62.5 K/W.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration in a compact SO-8 package
Logic-level gate threshold for direct microcontroller interfacing
Low on-resistance optimized for efficient power switching
HEXFET technology ensuring robust avalanche performance

FET, MOSFET Arrays Applications

DC-DC converter output stages
Load switching circuits
Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'Q' indicates automotive qualification status as per official Infineon documentation. Confirm the tape-and-reel packaging quantity matches project requirements. Ensure the ordering part number exactly matches the requested variant to avoid functional discrepancies. Cross-reference datasheet revisions for any parameter updates before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual isolated N-channel switches with low RDS(on). The logic-level gate drive simplifies control circuit design. Evaluate thermal management needs based on the 62.5 K/W junction-to-ambient resistance. Compare against single-channel alternatives if space constraints allow for separate components.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for high-performance power switching. The IRF7313 series offers dual configurations in SO-8 packages, balancing current capacity with footprint efficiency. It serves as a standard solution for general-purpose power management tasks where dual channel isolation is beneficial.