IRF7313TRPBF-1

Description：MOSFET 2N-CH 30V 6.5A 8SOIC
Series：HEXFET®

SKU:c78783e9a98f Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7313TRPBF-1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7313TRPBF-1

Description：MOSFET 2N-CH 30V 6.5A 8SOIC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Rds On (Max) @ Id, Vgs：29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7313TRPBF-1

IRF7313TRPBF-1

FET, MOSFET Arrays Overview

The IRF7313TRPBF-1 is a dual N-channel power MOSFET in an SO-8 package. It features a 30V drain-source voltage rating and a continuous drain current of 6.5A at 25°C. The maximum on-resistance is 0.029 ohms at VGS=10V, with a typical total gate charge of 22nC. It supports industrial temperature ranges up to 150°C junction temperature.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration for synchronous applications
Industry-standard pinout for multi-vendor compatibility
RoHS compliant and halogen-free construction

FET, MOSFET Arrays Applications

Synchronous rectification
Power switching circuits
DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix against official manufacturer documentation to confirm packaging type and lead-free status. Ensure the component meets the required industrial qualification standards and moisture sensitivity level specifications before integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low on-resistance and high current handling in a compact surface-mount package. Consider the thermal resistance and gate charge characteristics when designing drive circuits for optimal switching performance and efficiency.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET Power MOSFET family from Infineon Technologies. It utilizes advanced planar strip technology to achieve low on-resistance and fast switching speeds within a standard SO-8 footprint suitable for automated assembly.