IRF7313TRPBFXTMA1

FET, MOSFET Arrays Overview

The IRF7313TRPBFXTMA1 is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a SO-8 surface-mount package and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of 6.5 A at 25°C and dissipates up to 2 W of power. Key electrical parameters include a maximum on-resistance of 46 mΩ at 4.5 V gate drive and 29 mΩ at 10 V gate drive. The typical total gate charge is 22 nC, and the threshold voltage ranges from 1 V to 3 V. It functions within an operating temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact SO-8 package
• Logic-level gate drive capability for direct microcontroller interfacing
• Low on-resistance optimized for efficient power switching
• Enhanced thermal performance suitable for high-density designs

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Load switching in portable electronics
• Power management circuits in consumer devices
• Motor control applications requiring low-side switching

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the XTMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or product identification report before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in an SO-8 footprint. Ensure the application voltage remains below the 30 V breakdown limit. Verify that the gate drive voltage meets the logic-level requirements for optimal on-resistance performance. Check thermal constraints to ensure the 2 W power dissipation rating is sufficient for the intended operating environment.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon HEXFET family, known for planar trench technology. It is designed for general-purpose power switching applications where space efficiency and low conduction losses are critical. The dual configuration allows for cost-effective implementation of half-bridge or synchronous rectifier topologies.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with IRF7313TRPBF for identical electrical characteristics and pinout compatibility. Verify package dimensions and thermal resistance values match the existing design constraints before substitution.