IRF7317PBF

FET, MOSFET Arrays Overview

The IRF7317PBF is a dual-channel power MOSFET from Infineon Technologies, integrating one N-Channel and one P-Channel enhancement-mode transistor within a single SOIC-8 surface-mount package. Designed for low-voltage applications, it features a drain-source breakdown voltage (Vds) of 20 V and a maximum gate-source voltage (Vgs) of ±12 V. The device supports a continuous drain current (Id) of 6.6 A at 25°C, with a typical on-resistance (Rds(on)) of 29 mΩ. It operates within a temperature range of -55°C to +150°C junction temperature, dissipating up to 2 W of power.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-Channel and P-Channel enhancement-mode MOSFETs in a compact SOIC-8 package for space-constrained designs.
• Optimized for low-voltage switching applications with a 20 V drain-source rating and high continuous current capability.
• Features low on-resistance and fast switching characteristics suitable for efficient power management circuits.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Low-side and high-side switching in power distribution networks
• Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check lifecycle status as the part may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements before soldering. Validate pinout compatibility with target PCB footprint.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring integrated dual-channel switching in a small form factor. Compare Rds(on) and gate charge specifications against alternative dual MOSFETs for efficiency targets. Ensure the 20 V voltage rating exceeds peak circuit voltages with adequate margin. Verify thermal performance meets system dissipation requirements given the 2 W power limit.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's HEXFET power MOSFET portfolio, specifically designed for general-purpose switching applications. The IRF7317 series offers a cost-effective solution for combining N-type and P-type transistors, reducing board space compared to discrete components. It is part of the broader family of low-voltage silicon MOSFETs optimized for consumer and industrial electronics.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the package contain both N-Channel and P-Channel devices?

Yes, the IRF7317PBF integrates one N-Channel and one P-Channel enhancement-mode MOSFET in a single SOIC-8 package.

What is the typical gate charge value?

The typical gate charge (Qg) is 18 nC.