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IRF7324 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 9A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7324
- Description：MOSFET 2P-CH 20V 9A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：2940pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7324
FET, MOSFET Arrays Overview
The IRF7324 is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a -20V drain-source voltage rating and a continuous drain current of -9.0A at 25°C. The device exhibits an ultra-low on-resistance of 0.018Ω at VGS = -4.5V. Maximum power dissipation is 2.0W at 25°C, with a junction temperature range of -55 to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration for load management
- Trench technology for low on-resistance
- Low profile packaging under 1.1mm
FET, MOSFET Arrays Applications
- Battery management systems
- Load management applications
- Power switching circuits
FET, MOSFET Arrays Procurement Notes
Verify the component matches the exact Infineon part number IRF7324. Confirm the package type is SO-8 and that the specifications align with the official datasheet provided by International Rectifier or Infineon Technologies. Ensure the device meets required thermal and electrical ratings for the specific application environment.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring a compact dual P-channel solution. The low on-resistance supports efficient power handling. Verify that the gate drive voltage levels are compatible with the specified threshold and on-state requirements. Consider thermal derating factors when determining maximum operating currents.
FET, MOSFET Arrays Part Context
This component belongs to the HEXFET family from Infineon Technologies (formerly International Rectifier). It utilizes advanced trench processing techniques to achieve high performance within a small footprint. The device is designed for reliability in battery and load management applications.
FET, MOSFET Arrays Replacement Considerations
Check for direct pin-compatible alternatives with matching voltage and current ratings. Verify that any substitute maintains the same SO-8 package dimensions and thermal characteristics to ensure proper board integration.
FET, MOSFET Arrays FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is -9.0A at an ambient temperature of 25°C.
Is the device available in tape and reel?
Yes, the IRF7324 is available in tape and reel packaging.
What is the typical on-resistance value?
The typical on-resistance is 0.018Ω when measured at a gate-to-source voltage of -4.5V.
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