FET, MOSFET Arrays IRF7324PBF product image

IRF7324PBF

  • Description:MOSFET 2P-CH 20V 9A 8SO
  • Series:HEXFET®

SKU:55e81fa324e5 Category: Brand:

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IRF7324PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 9A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7324PBF

  • Description:MOSFET 2P-CH 20V 9A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:9A
  • Rds On (Max) @ Id, Vgs:18mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:63nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:2940pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7324PBF

IRF7324PBF

FET, MOSFET Arrays Overview

The IRF7324PbF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a -20V drain-source voltage and a continuous drain current of -9.0A at 25°C. The device exhibits an ultra-low on-resistance of 0.018Ω at VGS = -4.5V. Maximum power dissipation is 2.0W at 25°C, with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to ambient is 62.5°C/W.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration for efficient battery and load management
  • Advanced trench technology achieving extremely low on-resistance per silicon area
  • Ruggedized device design ensuring high reliability
  • Low profile package suitable for surface mount applications

FET, MOSFET Arrays Applications

  • Battery management systems
  • Load management circuits
  • Power switching applications requiring low on-resistance

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact part number IRF7324PbF or IRF7324PBF. Confirm the manufacturer is Infineon Technologies or International Rectifier. Check for lead-free compliance markings. Ensure the package type is SO-8. Validate that the datasheet specifications align with your circuit requirements before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switching with low on-resistance. Consider the -20V voltage rating and -9.0A current capability. Evaluate thermal performance based on the 62.5°C/W junction-to-ambient resistance. Ensure gate drive voltages are compatible with the specified threshold and on-resistance conditions.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs. It utilizes advanced processing techniques to minimize on-resistance. The dual channel design allows for compact implementation in power management circuits. The SO-8 package provides a balance between thermal performance and space efficiency.

FET, MOSFET Arrays Replacement Considerations

Check for pin-compatible alternatives with similar voltage and current ratings. Verify on-resistance and thermal characteristics match or exceed original specifications. Ensure gate charge and switching times are suitable for the application frequency.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is -9.0A at an ambient temperature of 25°C.

What is the typical on-resistance value?

The typical static drain-to-source on-resistance is 0.018Ω when measured at VGS = -4.5V and ID = -9.0A.

Is this component lead-free?

Yes, the IRF7324PbF is a lead-free product as indicated by the Pb suffix in the part number.

IRF7324PBFIRF7324PBF

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