IRF7325TRPBF

Description：MOSFET 2P-CH 12V 7.8A 8SO
Series：HEXFET®

SKU:e62fd2b25642 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7325TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 12V 7.8A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7325TRPBF

Description：MOSFET 2P-CH 12V 7.8A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：7.8A
Rds On (Max) @ Id, Vgs：24mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2020pF @ 10V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7325TRPBF

IRF7325TRPBF

FET, MOSFET Arrays Overview

The IRF7325TRPBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a -12V drain-source voltage and continuous drain currents of -7.8A at 25°C and -6.2A at 70°C. The device offers ultra-low on-resistance, specified as 24mΩ at VGS=-4.5V and 33mΩ at VGS=-2.5V. Thermal resistance from junction to ambient is 62.5°C/W, with a maximum power dissipation of 2.0W at 25°C. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration within a single low-profile SO-8 package for space-efficient designs.
Ultra-low on-resistance achieved through advanced Trench Technology processing.
Enhanced thermal characteristics via customized leadframe design suitable for vapor phase or wave soldering.

FET, MOSFET Arrays Applications

Power management circuits requiring compact dual-switch solutions.
Low-voltage DC-to-DC converter topologies.
Load switching applications in portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify the component matches the specific Infineon/IR part number IRF7325TRPBF. Confirm the package type is SO-8 and that the device is lead-free. Ensure the supplier provides valid traceability documentation consistent with the manufacturer's standards for consumer market qualification.

FET, MOSFET Arrays Selection Notes

Select this component for applications needing two P-channel switches in a small footprint. Evaluate thermal performance against the 62.5°C/W junction-to-ambient resistance. Consider the -12V rating and current derating curves when designing for high-temperature environments above 25°C.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family utilizing Trench Technology. It is designed for consumer market applications. The SO-8 package allows for multiple-die capability and improved thermal handling compared to standard variants.

FET, MOSFET Arrays Replacement Considerations

Check datasheets for alternative dual P-channel MOSFETs in SO-8 packages with similar -12V ratings and on-resistance values below 50mΩ. Verify pinout compatibility and thermal resistance specifications before substitution.