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IRF7328TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 8A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7328TRPBF
- Description：MOSFET 2P-CH 30V 8A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2675pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7328TRPBF
FET, MOSFET Arrays Overview
The IRF7328TRPBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of -30 V and continuous drain currents of -8.0 A at 25°C and -6.4 A at 70°C. The on-resistance is 21 mΩ at VGS = -10V and 32 mΩ at VGS = -4.5V. Total gate charge is typically 52 nC, with maximum power dissipation of 2.0 W at 25°C. Operating temperature ranges from -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration for load management
- Trench technology for low on-resistance
- Logic-level compatible threshold voltage
FET, MOSFET Arrays Applications
- Battery management systems
- Load management applications
- DC-DC converter synchronous rectification
FET, MOSFET Arrays Procurement Notes
Verify the component matches the Infineon Technologies IRF7328TRPBF designation. Confirm the SO-8 surface mount package and lead-free status. Ensure the datasheet specifications align with circuit requirements before integration.
FET, MOSFET Arrays Selection Notes
Select this device for applications requiring dual P-channel switching with low conduction losses. Evaluate thermal derating curves for high ambient temperatures. Verify gate drive voltage compatibility with the specified threshold characteristics.
FET, MOSFET Arrays Part Context
Part of the HEXFET family utilizing trench technology. Designed for consumer market applications. Manufactured by Infineon Technologies (formerly International Rectifier).
FET, MOSFET Arrays Replacement Considerations
Check pinout and electrical parameters against alternatives. No direct public substitutes are confirmed in the provided documentation.
FET, MOSFET Arrays FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is -32 A.
Is the device suitable for logic level driving?
Yes, it has a gate threshold voltage range of -1.0 V to -2.5 V, allowing operation with lower gate drive voltages.
What is the reverse recovery time of the body diode?
The typical reverse recovery time is 37 ns, with a maximum of 56 ns.
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