FET, MOSFET Arrays IRF7329PBF product image

IRF7329PBF

  • Description:MOSFET 2P-CH 12V 9.2A 8SO
  • Series:HEXFET®

SKU:81460292a683 Category: Brand:

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IRF7329PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 12V 9.2A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7329PBF

  • Description:MOSFET 2P-CH 12V 9.2A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:9.2A
  • Rds On (Max) @ Id, Vgs:17mOhm @ 9.2A, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:3450pF @ 10V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7329PBF

IRF7329PBF

FET, MOSFET Arrays Overview

The IRF7329PBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of -12 V and continuous drain currents of -9.2 A at 25°C and -7.4 A at 70°C. The device utilizes trench technology for ultra-low on-resistance, with maximum values of 17 mΩ at VGS = -4.5V and 30 mΩ at VGS = -1.8V. Total gate charge is typically 38 nC. Thermal resistance from junction to ambient is 62.5 °C/W, supporting operation within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration utilizing trench technology for low on-resistance
  • Low profile SO-8 package designed for enhanced thermal characteristics
  • Lead-free construction available in tape and reel packaging

FET, MOSFET Arrays Applications

  • Power management circuits requiring compact dual P-channel solutions
  • Battery protection systems
  • Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm lead-free status and packaging type. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the SO-8 package dimensions align with your PCB footprint design before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET is required in a low-profile surface-mount package. Evaluate the -12 V rating and current capabilities against your circuit's peak load demands. Consider the thermal resistance specifications to ensure adequate heat dissipation without excessive board space usage.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents an evolution of International Rectifier designs now integrated into Infineon's portfolio. The device is specifically engineered for consumer electronics applications where space efficiency and thermal performance are critical constraints.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement guides for verified substitutes. Generic cross-references may not match the specific electrical parameters or package tolerances required for reliable operation.

IRF7329PBFIRF7329PBF

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