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IRF7329PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 12V 9.2A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7329PBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of -12 V and continuous drain currents of -9.2 A at 25°C and -7.4 A at 70°C. The device utilizes trench technology for ultra-low on-resistance, with maximum values of 17 mΩ at VGS = -4.5V and 30 mΩ at VGS = -1.8V. Total gate charge is typically 38 nC. Thermal resistance from junction to ambient is 62.5 °C/W, supporting operation within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm lead-free status and packaging type. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the SO-8 package dimensions align with your PCB footprint design before finalizing procurement orders.
Select this component when a dual P-channel MOSFET is required in a low-profile surface-mount package. Evaluate the -12 V rating and current capabilities against your circuit's peak load demands. Consider the thermal resistance specifications to ensure adequate heat dissipation without excessive board space usage.
This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents an evolution of International Rectifier designs now integrated into Infineon's portfolio. The device is specifically engineered for consumer electronics applications where space efficiency and thermal performance are critical constraints.
Consult official replacement guides for verified substitutes. Generic cross-references may not match the specific electrical parameters or package tolerances required for reliable operation.
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