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IRF7329TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 12V 9.2A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7329TR
- Description：MOSFET 2P-CH 12V 9.2A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：9.2A
- Rds On (Max) @ Id, Vgs：17mOhm @ 9.2A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：57nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：3450pF @ 10V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7329TR
FET, MOSFET Arrays FAQ
Is the IRF7329TRPBF available in a SOIC-8 package?
Yes, the Infineon IRF7329TRPBF is available in an 8-pin SOIC surface-mount package.
What is the maximum drain-source voltage for this component?
The maximum drain-source voltage (Vds) for the IRF7329TRPBF is 30 V.
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