IRF7341QTRPBF

$1.03

Description：MOSFET 2N-CH 55V 5.1A 8SO
Series：-

SKU:fdcaee789786 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7341QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 5.1A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7341QTRPBF

Description：MOSFET 2N-CH 55V 5.1A 8SO
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：5.1A
Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：780pF @ 25V
Power - Max：2.4W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7341QTRPBF

IRF7341QTRPBF

FET, MOSFET Arrays Overview

The IRF7341QTRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 5.1 A at 25°C. The device offers an ultra-low on-resistance of 0.050 Ω at VGS = 10V and 0.065 Ω at VGS = 4.5V. It supports a junction temperature range from -55°C to +175°C with a thermal resistance (RθJA) of 62.5 °C/W. Total gate charge is typically 29 nC at VGS = 10V.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a single surface-mount SO-8 package for space efficiency.
Advanced process technology enabling extremely low on-resistance per silicon area.
High junction operating temperature rating up to 175°C for improved thermal performance.
Repetitive avalanche capability allowed up to the maximum junction temperature.

FET, MOSFET Arrays Applications

Power management modules
DC-DC converters
Synchronous rectification

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the marking code against the manufacturer's official documentation. Ensure the ordering suffix matches the required tape and reel packaging format. Confirm that the specific batch meets the industrial market qualification standards defined by Infineon Technologies.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high current density in a compact footprint. The 175°C rating allows operation in elevated thermal environments where standard devices may fail. Evaluate the gate charge requirements against the driver capabilities to ensure efficient switching speeds are achieved without excessive drive losses.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family, utilizing advanced processing techniques to minimize on-resistance. It is designed as a lead-free product suitable for industrial markets. The dual die structure provides two independent channels within one standardized surface-mount package.