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IRF7341TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 4.7A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7341TRPBF
- Description：MOSFET 2N-CH 55V 4.7A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：4.7A
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：740pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7341TRPBF
FET, MOSFET Arrays Overview
The IRF7341TRPBF is a dual N-channel power MOSFET from the Fifth Generation HEXFET series by Infineon Technologies. It features an SO-8 surface-mount package with a customized leadframe for enhanced thermal performance. Key electrical parameters include a drain-source voltage (VDS) of 55 V, a continuous drain current (ID) of 4.7 A at 25°C, and a maximum on-resistance (RDS(on)) of 0.065 Ω at VGS = 4.5 V. The device supports a junction temperature range of -55°C to +150°C and offers fast switching capabilities.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a single SO-8 package
- Ultra-low on-resistance per silicon area
- Fast switching speed and ruggedized device design
- Dynamic dv/dt rating capability
FET, MOSFET Arrays Applications
- Power applications requiring reduced board space
- Synchronous rectification circuits
- DC-DC converter designs
FET, MOSFET Arrays Procurement Notes
Verify the component authenticity against official Infineon documentation. Confirm that the ordering suffix TRPBF indicates tape and reel packaging suitable for automated assembly processes. Ensure compliance with RoHS standards and lead-free requirements as specified in the datasheet.
FET, MOSFET Arrays Selection Notes
Select this component for applications needing dual N-channel isolation within a compact footprint. Evaluate thermal resistance characteristics based on PCB copper area constraints. Consider the gate threshold voltage range when designing logic-level drive circuits.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET Power MOSFET family, utilizing advanced processing techniques for low on-resistance. The SO-8 package modification allows for multiple-die capability, making it efficient for various power management scenarios compared to standard single-channel variants.
FET, MOSFET Arrays Replacement Considerations
IRF7341PbF is the tube-packaged equivalent of the same die and specifications.
FET, MOSFET Arrays FAQ
What is the peak diode recovery dv/dt rating?
The peak diode recovery dv/dt rating is 5.0 V/ns.
Is the device available in tape and reel packaging?
Yes, the TRPBF suffix indicates availability in tape and reel format.
What is the maximum single pulse avalanche energy?
The single pulse avalanche energy (EAS) is rated at 72 mJ under specific test conditions.
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