IRF7342QTRPBF

Description：MOSFET 2P-CH 55V 3.4A 8SO
Series：-

SKU:f8a45d8b91d7 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7342QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 55V 3.4A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7342QTRPBF

Description：MOSFET 2P-CH 55V 3.4A 8SO
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：3.4A
Rds On (Max) @ Id, Vgs：105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：690pF @ 25V
Power - Max：2W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7342QTRPBF

IRF7342QTRPBF

FET, MOSFET Arrays Overview

The IRF7342QTRPBF is a dual P-channel HEXFET power MOSFET in an SO-8 surface-mount package. It features a -55V drain-source voltage and a maximum on-resistance of 0.105Ω at VGS=-10V. The device supports a continuous drain current of -3.4A at 25°C case temperature, with a pulsed current rating of -27A. It operates within a junction temperature range of -55°C to +150°C and includes an integral body diode.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration integrated into a single surface-mount package
Advanced HEXFET processing for ultra-low on-resistance per silicon area
Enhanced thermal characteristics suitable for space-constrained designs
Improved repetitive avalanche energy rating for robust operation

FET, MOSFET Arrays Applications

DC-DC converter circuits
Power management modules
Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'QTR' corresponds to the Tape & Reel packaging format as documented in the official datasheet. Confirm that the component meets Industrial qualification standards per JEDEC guidelines. Ensure the selected variant aligns with the required lead-free specifications and moisture sensitivity level requirements for the intended manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage power stages. Evaluate the thermal resistance and derating curves against the expected ambient conditions. Consider the gate charge and switching times for high-frequency applications. Verify that the -55V breakdown voltage provides adequate margin for the target circuit topology.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, utilizing advanced processing techniques to achieve low on-resistance. The SO-8 package provides enhanced thermal performance compared to standard packages. The dual configuration allows for efficient implementation of half-bridge or synchronous rectifier topologies while minimizing printed circuit board footprint.