IRF7342TR

FET, MOSFET Arrays Overview

The UMW IRF7342TR is a dual P-channel MOSFET in an SOP-8 package. It features Generation V technology for ultra-low on-resistance and fast switching. Key electrical parameters include a drain-source voltage (VDS) of -55V, continuous drain current (ID) of -3.4A at 25°C, and gate-source voltage (VGS) of ±20V. The device offers RDS(ON) values of 105mΩ at VGS=-10V and 170mΩ at VGS=-4.5V. It supports a pulsed drain current of -27A and single pulse avalanche energy of 114mJ. Thermal resistance (RθJA) is 62.5°C/W, with a junction temperature range of -55 to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration within a compact SOP-8 package
• Generation V technology enabling ultra-low on-resistance
• Fast switching characteristics with dynamic dv/dt rating
• Enhanced thermal performance via customized leadframe

FET, MOSFET Arrays Applications

• Power management circuits requiring low board space
• DC/DC converter designs utilizing multiple devices
• Automotive electronic systems compatible with ISO standards

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against official manufacturer documentation to ensure correct package type and delivery mode. Confirm that the component meets required environmental standards and operational temperature ranges for the intended application before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel isolation in a small footprint. Ensure the design accounts for the specified linear derating factor and maximum junction temperature limits. Verify gate drive voltages align with the threshold and absolute maximum ratings provided in the datasheet.

FET, MOSFET Arrays Part Context

This part belongs to the UMW IRF series of dual MOSFETs. It utilizes a customized leadframe designed for vapor phase, infrared, or wave soldering techniques. The package allows for multiple-die capability, reducing overall board space compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility and electrical parameter overlaps such as VDS, ID, and RDS(ON). Verify package dimensions match the existing PCB layout. Ensure thermal resistance and switching speeds are sufficient for the target circuit requirements.