IRF7379PBF

Description：MOSFET N/P-CH 30V 5.8A/4.3A 8SO
Series：HEXFET®

SKU:8af372d553db Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7379PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 5.8A/4.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7379PBF

Description：MOSFET N/P-CH 30V 5.8A/4.3A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.8A, 4.3A
Rds On (Max) @ Id, Vgs：45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：520pF @ 25V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7379PBF

IRF7379PBF

FET, MOSFET Arrays Overview

The IRF7379PbF is a dual HEXFET Power MOSFET array in an SO-8 package, featuring one N-channel and one P-channel device. It utilizes Generation V technology for ultra-low on-resistance and fast switching. The N-channel supports a drain-source voltage of 30V with a maximum continuous current of 5.8A at 25°C and an on-resistance of 0.045Ω. The P-channel provides -30V breakdown with 4.3A continuous current and 0.090Ω resistance. Both channels are fully avalanche rated.

FET, MOSFET Arrays Feature Summary

Complementary half-bridge configuration integrating N-channel and P-channel devices in a single surface-mount package.
Generation V HEXFET technology ensures extremely low on-resistance per silicon area for high efficiency.
Customized leadframe design enhances thermal characteristics and allows multiple-die capability.
Fully avalanche rated ruggedized device design suitable for demanding power applications.

FET, MOSFET Arrays Applications

Power management circuits requiring compact complementary switching solutions.
Motor control systems utilizing half-bridge topologies.
DC-DC converters and power supply designs needing efficient surface-mount switching.

FET, MOSFET Arrays Procurement Notes

Verify the component origin carefully as Infineon acquired International Rectifier. Confirm the specific ordering suffix matches the required lead-free status and tape-and-reel or tube packaging format. Ensure the datasheet version aligns with the manufacturing date code to guarantee accurate electrical parameters and compliance with current environmental standards.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require matched N/P-channel pairs. Evaluate thermal performance based on the 50°C/W junction-to-ambient resistance. Consider the 2.5W power dissipation limit at 25°C ambient temperature. Verify gate drive requirements against the specified threshold voltages and total gate charge values for optimal switching speed.

FET, MOSFET Arrays Part Context

This part belongs to the Fifth Generation HEXFET family originally developed by International Rectifier. These devices are characterized by advanced processing techniques that minimize on-resistance while maintaining robust switching speeds. The SO-8 package modification specifically targets improved thermal handling compared to standard variants.