IRF7379QTRPBF

FET, MOSFET Arrays Overview

The IRF7379QTRPBF is an automotive-grade dual N- and P-channel enhancement mode MOSFET from Infineon's HEXFET family. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device integrates one N-channel and one P-channel transistor in an SOIC-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 45 mΩ for the N-channel and 46 mΩ for the P-channel, with continuous drain currents of 5.8 A and 4.3 A respectively.

FET, MOSFET Arrays Feature Summary

• Automotive qualification compliant with AEC-Q100 standards for reliability.
• Integrated dual configuration combining N-channel and P-channel transistors.
• Enhanced switching performance utilizing advanced planar trench technology.

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Motor control circuits
• Load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm RoHS compliance and lead-free status. Confirm that the component meets current automotive quality requirements before integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual solution is required for low-voltage automotive environments. Ensure the thermal design accommodates the SOIC-8 package dissipation limits under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the IRF737 series of dual MOSFETs designed for automotive electronics. It provides a space-efficient alternative to discrete components while maintaining robust electrical characteristics suitable for harsh operating environments.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and thermal performance specifications.