IRF7379TR

FET, MOSFET Arrays Overview

The IRF7379TR is a dual N-channel and P-channel enhancement mode MOSFET from the HEXFET family, housed in an SO-8 surface-mount package. It features a drain-source voltage of 30V for both channels. The N-channel continuous drain current is 5.8A at 25°C, with a maximum on-resistance of 45mΩ at VGS=10V. The P-channel continuous drain current is 4.3A at 25°C, with a maximum on-resistance of 90mΩ at VGS=-10V. Power dissipation is rated at 2.5W, and the junction temperature range spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Complementary half-bridge configuration allows for simplified circuit design by integrating matched N-channel and P-channel devices.
• Advanced fifth-generation processing achieves ultra-low on-resistance per silicon area for improved efficiency.
• Fully avalanche rated capability ensures ruggedized device performance under transient conditions.

FET, MOSFET Arrays Applications

• DC-to-DC converter circuits
• Motor control applications
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the received part matches the specific IRF7379TR designation and packaging requirements. Review the datasheet for handling precautions and soldering guidelines to ensure proper integration into the target assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage switching applications. The SO-8 package offers a balance between thermal performance and board space savings compared to larger packages. Ensure the application current and voltage levels remain within the specified absolute maximum ratings for reliable operation.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET power MOSFET series developed by International Rectifier, now part of Infineon Technologies. The series utilizes advanced processing techniques to deliver high-performance switching capabilities in a standardized surface-mount footprint suitable for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

IRF7379PbF

FET, MOSFET Arrays FAQ

What is the maximum gate-to-source voltage rating?

The maximum gate-to-source voltage is ±20V.

Does the device support wave soldering?

Yes, the SO-8 package is designed for vapor phase, infrared, or wave soldering techniques.

What is the typical total gate charge for the N-channel?

The typical total gate charge (Qg) for the N-channel is 25nC.