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IRF7380TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 80V 3.6A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7380TRPBF
- Description：MOSFET 2N-CH 80V 3.6A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：73mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7380TRPBF
FET, MOSFET Arrays Overview
The IRF7380TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-to-source voltage of 80V and a continuous drain current of 3.6A at 25°C. The maximum on-resistance is 73mΩ at VGS=10V. Total gate charge is typically 15nC, with Miller charge at 4.5nC. Operating temperature ranges from -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Low gate-to-drain charge for reduced switching losses
- Fully characterized capacitance including effective COSS
- Fully characterized avalanche voltage and current ratings
FET, MOSFET Arrays Applications
- High frequency DC-DC converters
FET, MOSFET Arrays Procurement Notes
Verify the component matches the Infineon Technologies IRF7380TRPBF designation. Confirm the SO-8 surface-mount package and Pb-free compliance status against official datasheets. Ensure the ordering suffix aligns with reel packaging specifications before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring dual N-channel configurations within an SO-8 footprint. Evaluate thermal resistance and safe operating area limits under specific ambient temperatures. Verify that the 80V breakdown voltage meets circuit requirements.
FET, MOSFET Arrays Part Context
This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for high-frequency switching applications. The part integrates two independent N-channel transistors into a single compact package.
FET, MOSFET Arrays Replacement Considerations
IRF7380PBF is a verified lead-free alternative within the same series.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
