IRF7389

FET, MOSFET Arrays Overview

The IRF7389TRPBF is a dual N-channel and P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V. Continuous drain current ratings are specified at 5.3 A for the N-channel and 7.3 A for the P-channel. The maximum on-resistance is 46 mΩ, with a gate threshold voltage of 1 V and total gate charge of 22 nC. The component operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 2.5 W.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating one N-channel and one P-channel transistor within a single compact package.
• Enhancement mode operation utilizing silicon planar technology for reliable switching performance.
• Surface-mount construction designed for automated assembly processes.

FET, MOSFET Arrays Applications

• DC-to-DC converter circuits
• Power management integrated circuit output stages
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including suffixes such as TRPBF against official Infineon documentation to confirm specific packaging and compliance details. Ensure that the requested variant matches the required RoHS status and tape-and-reel specifications. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-switching solution is required for low-voltage power rails. The SOIC-8 package offers a balance between thermal performance and board space efficiency. Evaluate the combined on-resistance and gate charge parameters against the specific switching frequency and load requirements of the target application design.

FET, MOSFET Arrays Part Context

This component belongs to the IRF73xx series of dual MOSFETs from Infineon Technologies. These devices are engineered for general-purpose power switching tasks where space constraints limit the use of discrete single transistors. The series provides standardized pinouts and electrical characteristics suitable for integration into various consumer and industrial electronic systems.

FET, MOSFET Arrays Replacement Considerations

IRF7389TRPBF

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the P-channel?

The maximum continuous drain current for the P-channel is 7.3 A.

Does the IRF7389 support high-temperature operation?

Yes, the device supports junction temperatures up to +150 °C.

What is the package type for this dual MOSFET?

The component is available in an SOIC-8 surface-mount package.