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IRF7476TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 12V 15A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF7476TRPBF
- Description：MOSFET N-CH 12V 15A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 4.5V
- Rds On (Max) @ Id, Vgs：8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：2550 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for IRF7476TRPBF
Single FETs, MOSFETs Overview
The IRF7476TRPBF is a HEXFET N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 12 V and a continuous drain current of 15 A at 25°C, with a pulsed drain current capability of 120 A. The device exhibits a maximum on-resistance of 8.0 mΩ at VGS = 4.5V. Packaged in an SO-8 surface-mount format, it supports junction temperatures up to +150°C and includes fully characterized avalanche energy ratings.
Single FETs, MOSFETs Feature Summary
- Ultra-low gate impedance for efficient switching control
- Very low RDS(on) to minimize conduction losses
- Fully characterized avalanche voltage and current capabilities
Single FETs, MOSFETs Applications
- High frequency 3.3V and 5V input point-of-load synchronous buck converters
- Power management for networking equipment
- Computing applications requiring low voltage regulation
- Portable electronic devices
Single FETs, MOSFETs Procurement Notes
Verify the component authenticity against official Infineon documentation before integration. Confirm that the specific package variant matches the required PCB footprint. Ensure thermal management strategies align with the specified junction-to-ambient resistance values under expected operating loads.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current synchronous rectification tasks where minimal conduction loss is critical. Evaluate the 12V breakdown limit against peak transient voltages in the target circuit. Consider the SO-8 package constraints regarding thermal dissipation and available board space for heat spreading.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed specifically for consumer market applications, focusing on efficiency in portable and computing power systems. The technology utilizes silicon planar stripe architecture to achieve optimized performance metrics within its voltage class.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on pinout or generic specifications without validating electrical parameters against the original datasheet.
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