IRF7484PBF

Description：MOSFET N-CH 40V 14A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:19954a0f9acb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF7484PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 14A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7484PBF

Description：MOSFET N-CH 40V 14A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：7V
Rds On (Max) @ Id, Vgs：10mOhm @ 14A, 7V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 7 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：3520 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7484PBF

IRF7484PBF

Single FETs, MOSFETs Overview

The IRF7484PBF is a HEXFET power MOSFET featuring an N-channel configuration in an SO-8 surface-mount package. It supports a drain-source voltage of 40V and delivers a continuous drain current of 14A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 10mΩ at VGS=7.0V and ID=14A. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.0V, total gate charge up to 100nC, and input capacitance of 3520pF. Thermal performance includes a junction-to-ambient resistance of 50°C/W and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Utilizes Stripe Planar design for ultra-low on-resistance per silicon area
Supports repetitive avalanche operation up to maximum junction temperature
Features fast switching speed for efficient power conversion
Lead-free construction compliant with environmental standards

Single FETs, MOSFETs Applications

Industrial motor drive systems
Power management circuits requiring low RDS(on)
General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'PbF' indicates lead-free packaging as defined by the manufacturer's naming convention. Confirm the package type matches the required SO-8 footprint for PCB layout. Check current availability status as distribution channels may list obsolete or end-of-life variants. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 40V rating with high current handling capabilities in a compact surface-mount form factor. Evaluate thermal management requirements based on the 50°C/W junction-to-ambient resistance when operating without significant heatsinking. Consider the gate charge specifications for driver compatibility in high-frequency switching environments.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). The series is characterized by advanced process technology aimed at minimizing conduction losses while maintaining robust switching performance suitable for industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps before considering alternative manufacturers.