IRF7506TR

FET, MOSFET Arrays Overview

The IRF7506TR is a dual P-channel power MOSFET from Infineon Technologies, utilizing Generation V HEXFET technology. It features an ultra-low on-resistance of 0.27 ohms and supports a maximum drain current of 1.7 A with a breakdown voltage of 30 V. The device is housed in a compact Micro8 package, which offers half the footprint of a standard SO-8 while maintaining a low profile under 1.1 mm. Designed for logic level compatibility, it provides fast switching speeds suitable for space-constrained portable electronics.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a single component
• Ultra-low on-resistance achieved through advanced processing techniques
• Micro8 package provides minimal PCB footprint and low profile
• Logic level compatible for direct interface with control circuits

FET, MOSFET Arrays Applications

• Portable electronics requiring small form factors
• PCMCIA card applications
• Thin application environments with limited board space

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure the component meets the intended consumer market qualification standards. Confirm lead-free status and compliance with relevant environmental directives before integration into final designs.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints are critical due to its reduced Micro8 footprint compared to standard SO-8 packages. Consider the 30 V rating and 1.7 A current limit for appropriate load requirements. Evaluate thermal management needs based on the 0.27 ohm resistance and expected operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the Generation V HEXFET family from International Rectifier, now part of Infineon Technologies. These devices are characterized by ruggedized design and fast switching capabilities. The Micro8 package variant specifically targets applications where printed circuit board area is at a premium.

FET, MOSFET Arrays Replacement Considerations

Check for equivalent dual P-channel MOSFETs in the Micro8 or similar small outline packages. Verify that substitute components match the 30 V breakdown voltage, 1.7 A current rating, and 0.27 ohm on-resistance specifications.