IRF7506TRPBF

Description：MOSFET 2P-CH 30V 1.7A MICRO8
Series：HEXFET®

SKU:122167f453ea Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7506TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 1.7A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7506TRPBF

Description：MOSFET 2P-CH 30V 1.7A MICRO8
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1.7A
Rds On (Max) @ Id, Vgs：270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：180pF @ 25V
Power - Max：1.25W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package：Micro8™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7506TRPBF

IRF7506TRPBF

FET, MOSFET Arrays Overview

The IRF7506TRPBF is a dual P-channel silicon power MOSFET from the HEXFET series, housed in an 8-pin Micro-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 1.7 A. The device exhibits a maximum on-resistance of 0.27 Ω and operates within a temperature range of -55°C to +150°C junction temperature. Key electrical characteristics include a gate threshold voltage of 3 V, a gate charge of 5.3 nC, and a power dissipation capacity of 1.2 W.

FET, MOSFET Arrays Feature Summary

Dual configuration with integrated body diodes for compact circuit designs
Logic level compatible gate drive requirements
Enhanced mode operation for efficient switching control

FET, MOSFET Arrays Applications

DC-DC converter circuits
Power management modules
Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notices prior to procurement. Ensure storage conditions meet specified humidity sensitivity levels to prevent package degradation during handling and assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring dual P-channel isolation in a minimal footprint. Evaluate thermal performance against the 1.2 W dissipation limit and ensure gate drive voltages align with the 3 V threshold specification for reliable enhancement mode activation in target designs.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes standard silicon technology and is designed for surface-mount installation. The Micro-8 package provides a compact solution suitable for space-constrained consumer electronics and industrial power supply applications.