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IRF7507TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 2.4A MICRO8. Review the specifications below when checking this part for your BOM.
The IRF7507TR is a dual N-channel power MOSFET manufactured by Infineon Technologies, housed in a Micro8 surface-mount package. It features a drain-source voltage rating of 20V and a continuous drain current of 5.4A at 25°C. The device exhibits a maximum on-resistance of 30mΩ at VGS=4.5V and 1.3W total power dissipation. Key electrical parameters include a gate charge of 26nC at 4.5V and an input capacitance of 1310pF at 15V. Operating temperatures range from -55°C to 150°C junction temperature.
Verify component authenticity through authorized Infineon distributors. Confirm RoHS compliance status as the product may not meet specific environmental regulations depending on the manufacturing batch. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to soldering.
Select this component for low-voltage, high-current applications requiring compact packaging. Evaluate thermal management capabilities given the 1.3W power dissipation limit. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds and minimize transition losses in the target circuit design.
This part belongs to Infineon's HEXFET series of power MOSFETs. It serves as a surface-mount alternative to larger through-hole packages, enabling higher density PCB layouts. The dual configuration allows for complementary switching operations within a single footprint, reducing board space compared to discrete single-channel devices.
IRF7530TR is a documented substitute with similar dual N-channel characteristics and Micro8 packaging. Verify pin compatibility and electrical parameter alignment before implementation.
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