FET, MOSFET Arrays IRF7507TR product image

IRF7507TR

$8.57
  • Description:MOSFET N/P-CH 20V 2.4A MICRO8
  • Series:-

SKU:df1b45b1c00f Category: Brand:

  
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IRF7507TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 2.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7507TR

  • Description:MOSFET N/P-CH 20V 2.4A MICRO8
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.4A, 1.7A
  • Rds On (Max) @ Id, Vgs:140mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:260pF @ 15V
  • Power - Max:1.25W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:Micro8™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7507TR

IRF7507TR

FET, MOSFET Arrays Overview

The IRF7507TR is a dual N-channel power MOSFET manufactured by Infineon Technologies, housed in a Micro8 surface-mount package. It features a drain-source voltage rating of 20V and a continuous drain current of 5.4A at 25°C. The device exhibits a maximum on-resistance of 30mΩ at VGS=4.5V and 1.3W total power dissipation. Key electrical parameters include a gate charge of 26nC at 4.5V and an input capacitance of 1310pF at 15V. Operating temperatures range from -55°C to 150°C junction temperature.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for efficient bridge or half-bridge applications
  • Low on-resistance optimized for high-current switching performance
  • Surface-mount Micro8 package suitable for space-constrained designs

FET, MOSFET Arrays Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power management modules

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Infineon distributors. Confirm RoHS compliance status as the product may not meet specific environmental regulations depending on the manufacturing batch. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to soldering.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage, high-current applications requiring compact packaging. Evaluate thermal management capabilities given the 1.3W power dissipation limit. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds and minimize transition losses in the target circuit design.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET series of power MOSFETs. It serves as a surface-mount alternative to larger through-hole packages, enabling higher density PCB layouts. The dual configuration allows for complementary switching operations within a single footprint, reducing board space compared to discrete single-channel devices.

FET, MOSFET Arrays Replacement Considerations

IRF7530TR is a documented substitute with similar dual N-channel characteristics and Micro8 packaging. Verify pin compatibility and electrical parameter alignment before implementation.

IRF7507TRIRF7507TR
$8.57
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