FET, MOSFET Arrays IRF7507TRPBF product image

IRF7507TRPBF

$0.96
  • Description:MOSFET N/P-CH 20V 2.4A MICRO8
  • Series:HEXFET®

SKU:ebdf82854cae Category: Brand:

  
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IRF7507TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 2.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7507TRPBF

  • Description:MOSFET N/P-CH 20V 2.4A MICRO8
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.4A, 1.7A
  • Rds On (Max) @ Id, Vgs:140mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:260pF @ 15V
  • Power - Max:1.25W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:Micro8™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7507TRPBF

IRF7507TRPBF

FET, MOSFET Arrays Overview

The IRF7507TRPBF is a dual N/P-channel HEXFET power MOSFET array manufactured by Infineon Technologies. It features a drain-source voltage of 20V for the N-channel and -20V for the P-channel. The continuous drain current is specified at 2.4A for the N-channel and 1.7A for the P-channel. The device utilizes an 8-pin Micro package (Micro8) designed for surface mount applications. Maximum power dissipation is rated at 1.25W. The component operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating both N-channel and P-channel MOSFETs in a single compact package
  • HEXFET technology providing enhanced switching performance and low on-resistance characteristics

FET, MOSFET Arrays Applications

  • Low-voltage DC-DC converter circuits
  • Power management units requiring complementary switching pairs
  • Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific order matches the IRF7507TRPBF designation, as variants may exist with different suffixes. Check datasheet revisions to ensure compatibility with current design requirements. Note that this part is classified as obsolete; assess long-term availability risks before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for 20V logic-level applications. The integrated N/P pair simplifies circuit layout compared to discrete components. Ensure thermal management supports the 1.25W dissipation limit. Consider alternative active parts if long-term supply stability is critical for the product lifecycle.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs. It serves as a complement to single-channel devices like the IRF7707, offering a space-saving alternative for designs needing both polarities. The Micro8 package provides a small footprint suitable for portable electronics and dense PCB layouts where board area is constrained.

FET, MOSFET Arrays Replacement Considerations

The manufacturer has designated this product as obsolete. Engineers should evaluate alternative dual MOSFET arrays from Infineon or other manufacturers that offer similar 20V ratings and Micro8 packaging to ensure supply continuity.

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