IRF7509TR

FET, MOSFET Arrays Overview

The IRF7509TR is a dual N-channel and P-channel enhancement mode MOSFET from the HEXFET series, utilizing Fifth Generation V technology. It features an ultra-low on-resistance of 135 mΩ for the N-channel and 200 mΩ for the P-channel at VGS = 10V. The device operates with a drain-source voltage of ±30 V and supports continuous drain currents of 2.7 A (N-channel) and -2.0 A (P-channel) at 25°C. Packaged in a compact Micro8 outline with a low profile under 1.1 mm, it offers fast switching capabilities and a maximum junction temperature rating of 150°C.

FET, MOSFET Arrays Feature Summary

• Integrates both N-channel and P-channel transistors within a single Micro8 package to minimize printed circuit board footprint.
• Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area for high efficiency.
• Features a low-profile design suitable for space-constrained environments such as portable electronics and PCMCIA cards.

FET, MOSFET Arrays Applications

• Portable electronics requiring minimal PCB space
• PCMCIA card applications
• Battery management systems

FET, MOSFET Arrays Procurement Notes

Verify that the ordering suffix matches the specific tape and reel configuration required for automated assembly processes. Confirm the component is lead-free and complies with relevant environmental directives before finalizing procurement orders. Ensure the supplier provides valid traceability documentation for the manufacturing batch.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N/P channel configuration is necessary within a restricted physical footprint. Evaluate the thermal resistance characteristics against the expected power dissipation requirements. Consider the gate charge specifications to ensure compatibility with the driving circuit's switching speed limitations.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET Power MOSFET family, which employs advanced processing to deliver ruggedized device designs with fast switching speeds. The Micro8 package represents a significant reduction in size compared to standard SOIC outlines, offering the smallest footprint available in its class for surface mount applications.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic replacements may differ in pinout or electrical ratings.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for the IRF7509TR?

The maximum operating junction temperature range extends up to +150°C.

Does the IRF7509TR include internal body diodes?

Yes, the datasheet specifies peak diode recovery dv/dt ratings, indicating the presence of intrinsic body diodes for both channels.

What is the typical total gate charge for the N-channel?

The typical total gate charge is approximately 16 nC at a gate-to-source voltage of 10V.