IRF7530PBF

Description：MOSFET 2N-CH 20V 5.4A MICRO8
Series：HEXFET®

SKU:b6e1cec8a52f Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7530PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7530PBF

Description：MOSFET 2N-CH 20V 5.4A MICRO8
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.4A
Rds On (Max) @ Id, Vgs：30mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1310pF @ 15V
Power - Max：1.3W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package：Micro8™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7530PBF

IRF7530PBF

FET, MOSFET Arrays Overview

The IRF7530PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 60V drain-source voltage rating and operates in an enhancement mode. The device utilizes a TO-262-3 (D2Pak) through-hole package. Key electrical parameters include a continuous drain current of 195A, a maximum on-resistance of 2mΩ, and a gate charge of 411nC. It supports a maximum power dissipation of 375W and functions within a temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

Utilizes the StrongIRFET technology platform for optimized performance.
Features low on-resistance to minimize conduction losses.
Designed with high avalanche robustness and fully characterized capacitance.

FET, MOSFET Arrays Applications

Motor drive circuits
Synchronous rectification systems
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status via official datasheets before integration. Check for obsolescence notices as availability may vary. Ensure thermal management design aligns with the specified junction temperature limits. Validate package pinout compatibility with existing PCB footprints.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high current handling at low voltage levels. Consider the TO-262-3 package for through-hole assembly requirements. Evaluate thermal resistance characteristics against system heat dissipation capabilities. Compare gate charge specifications against driver output capabilities for switching efficiency.

FET, MOSFET Arrays Part Context

This part belongs to the StrongIRFET family of power MOSFETs from Infineon Technologies. It is designed for high-efficiency power conversion and motor control applications. The device represents a balance between low on-resistance and robust switching performance suitable for industrial environments.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match voltage, current, and package specifications. Verify thermal and electrical parameter equivalence before implementation.