IRF7530TR

$5.47

Description：MOSFET 2N-CH 20V 5.4A MICRO8
Series：HEXFET®

SKU:64e3a5c7d263 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7530TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7530TR

Description：MOSFET 2N-CH 20V 5.4A MICRO8
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.4A
Rds On (Max) @ Id, Vgs：30mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1310pF @ 15V
Power - Max：1.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package：Micro8™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7530TR

IRF7530TR

FET, MOSFET Arrays Overview

The IRF7530TR is a dual N-channel power MOSFET manufactured by Infineon Technologies under the HEXFET series. It utilizes Micro8 surface-mount packaging and operates with a drain-source voltage of 20V and a continuous drain current of 5.4A at 25°C. The device features a maximum on-resistance of 30 milliohms at 4.5V gate drive, with a typical gate charge of 18nC. It supports a junction temperature range from -55°C to 150°C and has a maximum power dissipation of 1.3W.

FET, MOSFET Arrays Feature Summary

Dual N-Channel Configuration
Micro8 Surface-Mount Packaging
HEXFET Technology

FET, MOSFET Arrays Applications

Power management circuits
Low-voltage switching applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm package integrity and pin alignment upon receipt. Check for moisture sensitivity indicators as per storage guidelines. Ensure compliance with relevant environmental regulations such as RoHS status before integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring compact dual-channel solutions in low-voltage environments. Evaluate thermal performance against the specified 1.3W dissipation limit. Consider the 30 milliohm on-resistance for efficiency requirements. Verify compatibility with standard Micro8 footprints during PCB layout.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs. It provides a dual-channel solution within a small Micro8 footprint, suitable for space-constrained applications. The technology focuses on optimizing on-resistance and gate charge characteristics for efficient switching operations.