IRF7555TR

FET, MOSFET Arrays Overview

The IRF7555TR is a dual P-channel MOSFET array manufactured by Infineon Technologies under the HEXFET series. It features a 20V drain-source voltage rating and a continuous drain current of 4.3A at 25°C. The device utilizes logic-level gate technology with a maximum on-resistance of 55 milliohms at 4.5V gate drive. Packaged in an 8-TSSOP Micro8 surface-mount housing, it supports junction temperatures from -55°C to 150°C and offers a maximum power dissipation of 1.25W.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a single compact package for space-efficient circuit design
• Logic-level gate architecture enabling direct interface with standard digital control signals
• Surface-mount Micro8 packaging optimized for automated assembly and high-density layouts

FET, MOSFET Arrays Applications

• Low-voltage DC-DC converter circuits requiring synchronous rectification
• Battery protection modules utilizing dual-switch topologies
• Load switching applications in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to discontinued status. Confirm package marking and datasheet revision against original specifications. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering. Validate supplier documentation for lead-free compliance and material content declarations.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-channel switching within strict footprint constraints. Evaluate thermal management capabilities given the 1.25W power dissipation limit in the small outline package. Consider the 55 milliohm on-resistance for efficiency requirements at 4.3A load currents. Verify compatibility with available logic voltage levels for reliable gate drive operation.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs known for robust performance in switching applications. The TR suffix indicates tape and reel packaging suitable for high-volume manufacturing processes. As a dual-array device, it consolidates two independent P-channel transistors to simplify board layout and reduce component count in power management systems.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon replacement guides or engineering change notices for verified alternatives.