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IRF7751GTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 4.5A 8TSSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7751GTRPBF
- Description：MOSFET 2P-CH 30V 4.5A 8TSSOP
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1464pF @ 25V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7751GTRPBF
FET, MOSFET Arrays Overview
The IRF7751GTRPBF is a dual P-channel MOSFET manufactured by Infineon Technologies. It features a drain-source voltage rating of -20 V and a continuous drain current of -4.7 A. The device exhibits a maximum on-resistance of 36 milliohms at a gate-source voltage of -10 V. It is housed in an SOIC-8 surface-mount package with a power dissipation capacity of 1.5 W. The component operates within a temperature range of -55 °C to +150 °C.
FET, MOSFET Arrays Feature Summary
- Dual independent P-channel configuration for space-efficient circuit designs
- Low on-resistance characteristics for efficient power switching
- Surface-mount packaging suitable for automated assembly processes
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration, as component specifications may vary between production batches. Confirm that the SOIC-8 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under expected operating conditions.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage power control. The -20 V rating suits systems operating below this threshold. Evaluate the 36 milliohm on-resistance against total system power loss requirements. Consider the SOIC-8 package constraints regarding heat dissipation and available board space compared to single-channel alternatives.
FET, MOSFET Arrays Part Context
This part belongs to Infineon's HEXFET power MOSFET portfolio, designed for general-purpose switching applications. The dual configuration integrates two separate P-channel transistors into a single package, reducing component count and board area compared to using individual discrete devices. It targets cost-sensitive consumer and industrial electronics requiring reliable low-side or high-side switching capabilities.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
