FET, MOSFET Arrays IRF7751TRPBF product image

IRF7751TRPBF

  • Description:MOSFET 2P-CH 30V 4.5A 8TSSOP
  • Series:HEXFET®

SKU:e732058f1c4e Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IRF7751TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 4.5A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7751TRPBF

  • Description:MOSFET 2P-CH 30V 4.5A 8TSSOP
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:35mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1464pF @ 25V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7751TRPBF

IRF7751TRPBF

FET, MOSFET Arrays Overview

The IRF7751TRPBF is a dual P-Channel HEXFET power MOSFET housed in a TSSOP-8 package. It features an ultra-low on-resistance of 35 mΩ at VGS = -10V and 55 mΩ at VGS = -4.5V, supporting continuous drain currents of -4.5A at 25°C and -3.6A at 70°C. The device offers a drain-source voltage rating of -30V and a gate-source voltage limit of ±20V. With a total gate charge of 29 nC and a junction temperature range from -55°C to +150°C, it provides efficient switching for compact designs.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel configuration within a single component
  • Ultra-low on-resistance for high efficiency
  • TSSOP-8 package with reduced footprint area
  • Low profile design suitable for thin environments

FET, MOSFET Arrays Applications

  • Battery management systems
  • Load management circuits
  • Portable electronics
  • PCMCIA cards

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer origin, as Infineon acquired International Rectifier. Confirm RoHS compliance status and lead-free certification directly with the supplier or official datasheet revisions. Ensure the TSSOP-8 package dimensions match your PCB layout requirements before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints are critical due to its small TSSOP-8 footprint. It is appropriate for applications requiring low on-resistance at standard logic-level gate voltages (-4.5V). Consider the thermal derating characteristics if operating near the maximum junction temperature limits.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family, known for advanced processing techniques that minimize on-resistance per silicon area. The TSSOP-8 package provides a 45% reduction in footprint compared to standard SO-8 packages, making it ideal for dense printed circuit board layouts where space is limited.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET series or other manufacturers offering similar dual P-channel configurations in TSSOP-8 packages. Verify electrical parameters such as Rds(on) and Vgs(th) to ensure functional equivalence.

IRF7751TRPBFIRF7751TRPBF

Click on the inquiry