IRF7752TRPBF

Description：MOSFET 2N-CH 30V 4.6A 8TSSOP
Series：HEXFET®

SKU:fd444b4b8191 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7752TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 4.6A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7752TRPBF

Description：MOSFET 2N-CH 30V 4.6A 8TSSOP
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.6A
Rds On (Max) @ Id, Vgs：30mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：861pF @ 25V
Power - Max：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7752TRPBF

IRF7752TRPBF

FET, MOSFET Arrays Overview

The IRF7752TRPBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TSSOP-8 package with a low profile under 1.1mm. The device supports a drain-source voltage of 30V and continuous drain currents of ±4.6A at 25°C and ±3.7A at 70°C. Maximum on-resistance is 30mΩ at VGS=10V and 36mΩ at VGS=4.5V. Total gate charge is typically 9nC. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a compact TSSOP-8 package
Ultra-low on-resistance for high efficiency
Low profile design suitable for space-constrained environments

FET, MOSFET Arrays Applications

Battery management systems
Load management circuits
Portable electronics
PCMCIA cards

FET, MOSFET Arrays Procurement Notes

Verify the component manufacturer, as the datasheet originates from International Rectifier before its acquisition by Infineon. Confirm the specific ordering suffix matches the requested tape and reel packaging format. Ensure the part number corresponds to the lead-free version indicated in the documentation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel switching in a minimal footprint. The low profile facilitates integration into thin devices like PCMCIA cards. Evaluate thermal derating requirements carefully, as power dissipation decreases significantly above 70°C ambient temperature.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family, utilizing advanced processing techniques to achieve low on-resistance per silicon area. The TSSOP-8 package offers 45% less footprint than standard SO-8 packages, optimizing printed circuit board space usage for industrial and consumer applications.