IRF7757TRPBF

FET, MOSFET Arrays Overview

The IRF7757TRPBF is a dual N-channel HEXFET power MOSFET in a TSSOP-8 package. It features a 20V drain-source voltage rating and an on-resistance of 35mΩ at VGS=4.5V, or 40mΩ at VGS=2.5V. The device supports a continuous drain current of 4.8A at 25°C ambient temperature. It includes common drain configuration and integrated body diodes with a reverse recovery time of 30ns maximum.

FET, MOSFET Arrays Feature Summary

• Dual N-channel architecture with common drain connection for space-efficient designs
• Ultra-low on-resistance optimized for battery and load management applications
• Very small low-profile TSSOP-8 package providing significant footprint reduction compared to standard SOIC

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits
• Portable electronics requiring thin form factors
• PCMCIA card implementations

FET, MOSFET Arrays Procurement Notes

Verify the component matches the specific Infineon/International Rectifier part number IRF7757TRPBF. Confirm the TSSOP-8 package type and lead-free status. Ensure the datasheet revision aligns with the required electrical specifications for your design constraints.

FET, MOSFET Arrays Selection Notes

Select this component when board space is limited due to its compact TSSOP-8 footprint. It is suitable for low-voltage applications requiring 20V breakdown. Consider the thermal derating requirements if operating above 25°C ambient temperature.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family from International Rectifier, now part of Infineon Technologies. The series utilizes advanced processing techniques to achieve low on-resistance per silicon area within ruggedized designs suitable for consumer market applications.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents such as the IRF7757PBF (non-reel version). Verify pinout compatibility and electrical parameters against other dual N-channel MOSFETs in TSSOP-8 packages before substitution.

FET, MOSFET Arrays FAQ

What is the maximum junction-to-ambient thermal resistance?

The maximum junction-to-ambient thermal resistance is 105 °C/W.

Does the device include internal diodes?

Yes, it features two integrated body diodes with a maximum reverse recovery time of 30ns.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 0.60V to 1.2V at a drain current of 250µA.