Single FETs, MOSFETs IRF7759L2TR1PBF product image

IRF7759L2TR1PBF

  • Description:MOSFET N-CH 75V 26A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:e70bae066233 Category: Brand:

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IRF7759L2TR1PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 26A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7759L2TR1PBF

  • Description:MOSFET N-CH 75V 26A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:26A (Ta), 375A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.3mOhm @ 96A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:12222 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.3W (Ta), 125W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DirectFET™ Isometric L8
  • Package / Case:DirectFET™ Isometric L8

Single FETs, MOSFETs datasheet and documents for IRF7759L2TR1PBF

IRF7759L2TR1PBF

Single FETs, MOSFETs Overview

The IRF7759L2TR1PBF is a single N-channel HEXFET power MOSFET utilizing DirectFET L8 packaging. It features a drain-to-source voltage of 75V and a maximum continuous drain current of 375A at case temperature of 25°C. The typical on-resistance is 1.8mΩ at VGS=10V, with a total gate charge of 200nC. The device supports dual-sided cooling, operates within a junction temperature range of -55°C to +175°C, and has a peak soldering temperature qualification up to 260°C.

Single FETs, MOSFETs Feature Summary

  • Combines advanced HEXFET silicon technology with DirectFET packaging for minimized footprint and low profile
  • Optimized for high-frequency switching and synchronous rectification applications
  • Dual-sided cooling capability maximizes thermal transfer in power systems
  • High Cdv/dt immunity and industrial qualification

Single FETs, MOSFETs Applications

  • High performance isolated converter primary switch socket
  • Synchronous rectification circuits
  • Power converters requiring high efficiency and low temperatures

Single FETs, MOSFETs Procurement Notes

Verify the TR1 suffix indicates a mini-reel quantity of 1000 parts, distinct from the standard 4000-part reel. Confirm compliance with RoHS standards and lead-free requirements (qualified up to 260°C reflow). Ensure adherence to assembly methods specified in application note AN-1035 regarding manufacturing processes and stencil design.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing low conduction losses and high thermal performance in compact footprints smaller than D2PAK. Suitable for applications demanding high current handling and fast switching speeds. Verify that the system layout supports the DirectFET package geometry and utilizes vapor phase, infrared, or convection soldering techniques as recommended.

Single FETs, MOSFETs Part Context

This part belongs to the DirectFET family of power MOSFETs manufactured by Infineon Technologies. It integrates silicon technology with specialized packaging to achieve superior thermal characteristics compared to traditional surface mount packages. The product line is designed to meet industrial qualification standards while maintaining compatibility with existing surface mount assembly equipment.

Single FETs, MOSFETs Replacement Considerations

The standard reel version IRF7759L2TRPBF serves as a direct functional substitute differing only in packaging quantity (4000 vs 1000 parts). No alternative electrical substitutes are confirmed in the provided documentation.

IRF7759L2TR1PBFIRF7759L2TR1PBF

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